SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A
G
KRA101S~KRA106S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
Reduce a Quantity of Parts and Manufacturing Process.
2
3
1
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
C
P
P
KRA102S
KRA103S
KRA104S
KRA105S
KRA106S
10
22
47
2.2
4.7
10
22
47
47
47
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
IN
COMMON(+)
K
KRA101S
4.7
4.7
M
SOT-23
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRA101S
106S
V
O
RATING
-50
-20, 10
-30, 10
V
I
-40, 10
-40, 10
-12, 5
-20, 5
I
O
KRA101S
106S
P
D
T
j
T
stg
-100
200
150
-55 150
mA
mW
V
UNIT
V
CHARACTERISTIC
KRA101S
KRA102S
Input Voltage
KRA103S
KRA104S
KRA105S
KRA106S
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MARK SPEC
TYPE
MARK
KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S
PA
PB
PC
PD
PE
PF
Marking
Lot No.
Type Name
2003. 11. 4
Revision No : 3
J
TYPE NO.
R1(k
)
R2(k
)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
N
H
D
1/6
KEC [ KEC(KOREA ELECTRONICS) ]
