SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A
G
KRA107S~KRA109S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
Reduce a Quantity of Parts and Manufacturing Process.
2
3
1
P
P
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRA107S
R1(k
10
22
47
)
R2(k
47
47
22
)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
M
IN
KRA108S
KRA109S
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
COMMON(+)
K
SOT-23
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRA107S
109S
V
O
RATING
-50
-30, 6
V
I
-40, 7
-40, 15
I
O
KRA107S
109S
P
D
T
j
T
stg
-100
200
150
-55 150
mA
mW
V
UNIT
V
CHARACTERISTIC
KRA107S
Input Voltage
KRA108S
KRA109S
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MARK SPEC
TYPE
MARK
KRA107S
PH
KRA108S
PI
KRA109S
PJ
Marking
Lot No.
Type Name
2004. 1. 8
Revision No : 3
J
D
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
