SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
KRA301E~KRA306E
EPITAXIAL PLANAR PNP TRANSISTOR
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
TYPE NO.
KRA301E
KRA302E
KRA303E
KRA304E
KRA305E
KRA306E
R1(k
4.7
10
22
47
2.2
4.7
)
R2(k
4.7
10
22
47
47
47
)
MAXIMUM RATING (Ta=25
)
SYMBOL
KRA301E
306E
V
O
RATING
-50
-20, 10
-30, 10
-40, 10
V
I
KRA304E
KRA305E
KRA306E
-40, 10
-12, 5
-20, 5
I
O
P
D
KRA301E
306E
T
j
T
stg
-100
100
150
-55
150
mA
mW
V
UNIT
V
CHARACTERISTIC
Output Voltage
KRA301E
KRA302E
KRA303E
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MARK SPEC
TYPE
MARK
KRA301E
PA
KRA302E
PB
KRA303E
PC
KRA304E
PD
KRA305E
PE
KRA306E
PF
2008. 3. 4
Revision No : 2
1/7
KEC [ KEC(KOREA ELECTRONICS) ]
