SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
KRC401E~KRC406E
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
D
3
DIM
A
B
C
D
E
G
H
J
H
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
A
G
1
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRC401E
R1(k )
4.7
10
22
47
2.2
4.7
R2(k
4.7
10
22
47
47
47
)
J
C
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
IN
KRC402E
KRC403E
KRC404E
COMMON
KRC405E
KRC406E
ESM
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRC401E 406E
KRC401E
KRC402E
V
O
RATING
50
20, -10
30, -10
V
I
40, -10
40, -10
12, -5
20, -5
I
O
KRC401E 406E
P
D
T
j
T
stg
100
100
150
-55
150
mA
mW
V
UNIT
V
CHARACTERISTIC
Input Voltage
KRC403E
KRC404E
KRC405E
KRC406E
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MARK SPEC
TYPE
MARK
KRC401E
NA
KRC402E
NB
KRC403E
NC
KRC404E
ND
KRC405E
NE
KRC406E
NF
Marking
Type Name
1999. 6. 8
Revision No : 0
1/6
KEC [ KEC(KOREA ELECTRONICS) ]
