SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC401V~KRC406V
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
High Packing Density.
A
G
1
B
H
3
K
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
C
P
P
TYPE NO.
KRC401V
KRC402V
KRC403V
KRC404V
R1(k )
4.7
10
22
47
2.2
4.7
R2(k
4.7
10
22
47
47
47
)
IN
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
COMMON
KRC405V
KRC406V
VSM
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRC401V 406V
KRC401V
KRC402V
V
O
RATING
50
20, -10
30, -10
V
I
40, -10
40, -10
12, -5
20, -5
I
O
KRC401V 406V
P
D
T
j
T
stg
100
100
150
-55
150
mA
mW
V
UNIT
V
CHARACTERISTIC
Input Voltage
KRC403V
KRC404V
KRC405V
KRC406V
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
MARK SPEC
TYPE
MARK
KRC401V
NA
KRC402V
NB
KRC403V
NC
KRC404V
ND
KRC405V
NE
KRC406V
NF
Marking
J
D
Reduce a Quantity of Parts and Manufacturing Process.
2
DIM MILLIMETERS
_
A
1.2 +0.05
_
B
0.8 +0.05
_
C
0.5 + 0.05
_
D
0.3 + 0.05
_
E
1.2 + 0.05
_
0.8 + 0.05
G
0.40
H
_
0.12 + 0.05
J
_
K
0.2 + 0.05
P
5
Type Name
2001. 7. 24
Revision No : 0
1/6
KEC [ KEC(KOREA ELECTRONICS) ]
