SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC657E~KRC659E
EPITAXIAL PLANAR NPN TRANSISTOR
B
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A1
A
1
B1
5
DIM
A
A1
B
2
3
4
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2+ 0.05
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
C
EQUIVALENT CIRCUIT
OUT
R1
R2
BIAS RESISTOR VALUES
TYPE NO.
KRC657E
KRC658E
KRC659E
R1(k )
10
22
47
R2(k
47
47
22
)
H
P
P
IN
1. Q
1
IN (BASE)
2. Q
1
, Q
2
COMMON (EMITTER)
3. Q
2
IN (BASE)
4. Q
2
OUT (COLLECTOR)
5. Q
1
OUT (COLLECTOR)
COMMON
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
J
D
Q2
1
2
3
MAXIMUM RATING (Ta=25
Output Voltage
)
SYMBOL
KRC657E 659E
KRC657E
V
O
RATING
50
30, -6
V
I
40, -7
40,-15
I
O
KRC657E 659E
P
D
*
T
j
T
stg
100
200
150
-55 150
mA
mW
V
UNIT
V
CHARACTERISTIC
Input Voltage
KRC658E
KRC659E
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
Marking
5
4
Type Name
MARK SPEC
TYPE
MARK
KRC657E
NH
KRC658E
NI
KRC659E
NJ
1
2
3
2002. 1. 24
Revision No : 1
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