SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A1
KRC830U~KRC834U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
5
4
D
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
2
3
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
H
C
C
6
5
4
G
T
T
Q1
Q2
E
1.
2.
3.
4.
5.
6.
Q
1
Q
2
Q
2
Q
2
Q
1
Q
1
EMITTER
EMITTER
BASE
COLLECTOR
BASE
COLLECTOR
1
2
3
US6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC830U
KRC831U
Input Resistor
KRC832U
KRC833U
KRC834U
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
Type Name
5
4
MAX.
100
100
-
0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
k
Note : * Characteristic of Transistor Only.
MARK SPEC
TYPE
MARK
KRC830U
YK
KRC831U
YM
KRC832U
YN
KRC833U
YO
KRC834U
YP
Marking
6
1
2
3
2002. 7. 10
Revision No : 2
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
