SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
3
KRX201E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
A1
(Thin Extreme Super mini type with 6 pin.)
A
C
1
6
C
2
5
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
EQUIVALENT CIRCUIT
Q
1
R1
OUT
Q
2
R1
OUT
Q
1
, Q
2
R1=10KΩ
R2=10KΩ
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
H
J
IN
IN
R2
COMMON
R2
COMMON
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
6
5
D
Type Name
4
Q1
Q2
BA
1
2
3
1
2
3
Q1 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
)
SYMBOL
V
O
V
I
I
O
RATING
50
30, -10
100
UNIT
V
V
Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
)
SYMBOL
V
O
V
I
I
O
RATING
-50
-30, 10
-100
UNIT
V
V
Q1, Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
)
SYMBOL
P
D
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
2002. 1. 24
Revision No : 1
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
