SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
Complementary to KTC2022D/L.
Q
A
C
KTA1042D/L
EPITAXIAL PLANAR PNP TRANSISTOR
I
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-100
-100
-5
-5
-0.5
20
150
-55 150
UNIT
V
V
V
A
A
W
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
D
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
A
C
I
J
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
Q
K
1. BASE
2. COLLECTOR
3. EMITTER
E
B
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-50mA, I
B
=0
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-4A
I
C
=-4A, I
B
=-0.4A
V
CE
=-5V, I
C
=-4A
V
CE
=-5V, I
C
=-1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-100
70
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
30
270
MAX.
-100
-1
-
240
-
-2.0
-1.5
-
-
V
V
MHz
pF
UNIT
A
mA
V
O:70~140, Y:120~240.
2003. 3. 27
Revision No : 3
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
