SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.7pF(Typ.)
A
G
L
KTC3880S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
2
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
40
30
4
20
-20
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
C
N
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
H
M
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
Marking
h
FE
Rank
Type Name
Lot No.
AQ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
Power Gain
Note : h
FE
Classification
R:40 80,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
C
rbb
'
NF
G
pe
O:70 140,
Y:100
TEST CONDITION
V
CB
=18V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CB
=6V, f=1MHz, I
E
=0
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=-1mA, f=30MHz
V
CC
=6V, I
E
=-1mA, f=100MHz (Fig.)
200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
pF
MHz
pS
dB
UNIT
A
A
2003. 6. 20
Revision No : 5
J
D
1/6
KEC [ KEC(KOREA ELECTRONICS) ]
