SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
KTC9013
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
・Complementary
to KTC9012.
N
K
D
G
E
A
・Excellent
h
FE
Linearity.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
40
30
5
500
-500
625
mW
400
150
-55�½�150
℃
℃
UNIT
V
V
M
H
F
F
V
mA
mA
L
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification D:64�½�91,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
E:78�½�112,
TEST CONDITION
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=50mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, V
CE
=1V
V
CB
=6V, I
C
=20mA, f=100MHz
V
CB
=6V, I
E
=0, f=1MHz
G:118�½�166,
H:144�½�202,
140
-
I:176�½�246
MIN.
-
-
64
-
TYP.
-
-
-
0.1
0.8
-
7.0
MAX.
0.1
0.1
246
0.25
1.0
-
-
V
V
MHz
pF
UNIT
μ
A
μ
A
F:96�½�135,
2010. 6. 25
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
