SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
・2.5
Gate Drive.
・Low
Threshold Voltage : V
th
=0.5�½�1.5V.
・High
Speed.
・Small
Package.
・Enhancement-Mode.
KTK5132S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
L
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
P
P
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
2
3
A
G
H
1
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
30
±20
100
200
150
-55�½�150
V
V
mA
mW
℃
℃
1. SOURCE
2. GATE
3. DRAIN
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
SYMBOL
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
TEST CONDITION
V
GS
=±16V, V
DS
=0V
I
D
=100μ V
GS
=0V
A,
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=0.1mA
V
DS
=3V, I
D
=10mA
I
D
=10mA, V
GS
=2.5V
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DD
=5V, I
D
=10mA, V
GS
=0�½�5V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
±1
-
1
1.5
-
7
-
-
-
-
-
UNIT
μ
A
V
μ
A
V
mS
Ω
pF
pF
pF
nS
nS
2002. 6. 21
Revision No : 1
J
MAXIMUM RATING (Ta=25℃)
C
N
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
