SEMICONDUCTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.),
V
CE
=4V, I
C
=1A.
Low Collector-Emitter Saturation Voltage.
Q
C
K
Complementary to MJD117/L.
H
E
M
Straight Lead (IPAK, "L" Suffix)
P
F
1
2
F
3
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
DC
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
100
100
5
2
4
50
1.0
20
150
Q
UNIT
V
V
V
A
mA
W
DPAK
1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
D
A
C
I
J
D
O
-55 150
H
G
P
C
B
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
K
1. BASE
2. COLLECTOR
3. EMITTER
R
1
=
10kΩ
R
2
=
0.6kΩ
E
E
B
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
SYMBOL
V
CEO(SUS)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(ON)
f
T
C
ob
TEST CONDITION
I
C
=30mA, I
B
=0
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=3V, I
C
=0.5A
V
CE
=3V, I
C
=2A
I
C
=2A, I
B
=8mA
V
CE
=3V, I
C
=2A
V
CE
=10V, I
C
=0.75A, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
MIN.
100
-
-
-
500
1,000
-
-
25
-
TYP.
-
-
-
-
-
12,000
-
-
-
-
MAX.
-
20
20
2
-
-
2.0
2.8
-
100
V
V
MHz
pF
UNIT
V
A
mA
2003. 3. 27
Revision No : 4
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
