SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : P
C
=350mW.
MMBTA44
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-BaseVoltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
450
400
6
300
350
150
-55
0.6mm.
150
UNIT
V
V
V
mA
mW
* : Package Mounted On 99.5% Alumina 10 8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
C
=100 A, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=400V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
DC Current Gain
*
h
FE
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CE(sat)
1
Collector-Emitter Saturation Voltage *
V
CE(sat)
2
V
CE(sat)
3
Base-Emitter Saturation Voltage *
Transition Frequency
Collector Output Capacitance
Input Capacitance
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
V
BE(sat)
f
T
C
ob
C
ib
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=10mA, f=10MHz
V
CB
=20V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
MIN.
450
400
450
6.0
-
-
-
40
50
45
40
-
-
-
-
20
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
100
500
100
-
200
-
-
0.4
0.5
0.75
0.75
-
7
130
V
MHz
pF
pF
V
UNIT
V
V
V
V
nA
nA
nA
2008. 3. 10
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
