SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
B
MPS751
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
High Current : I
C
(Max.)=-1A.
High Transition Frequency : f
T
=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to MPS651.
K
D
E
G
N
A
High Voltage : V
CEO
=-60V(Min.).
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
-80
-60
-5
-1
A
-2
625
150
-55 150
mW
UNIT
L
F
F
1
2
3
V
V
V
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitanc
Note : h
FE
(1) Classification
0:60 120 , Y:100
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
(BR)CEO
V
CE(sat)
V
BE(sat)
f
T
C
ob
200
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-50mA
V
CE
=-2V, I
C
=-1A
I
C
=-1mA, I
B
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
60
30
60
-
-
-
-
TYP.
-
-
-
-
-
-0.2
-0.85
150
12
MAX.
-100
-100
200
-
-
-0.7
-1.2
-
-
V
V
V
MHz
pF
UNIT
nA
nA
1999. 11. 30
Revision No : 2
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
