SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
B
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
K
D
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
C
T
j
T
stg
RATING
30
30
10
500
625
150
-55
150
UNIT
V
V
M
H
F
F
V
mA
mW
L
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Emitter Cut-off Current
MPSA13
DC Current Gain
MPSA14
MPSA13
MPSA14
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwith Product
V
CE(sat)
V
BE
f
T
h
FE
I
C
=100mA, V
CE
=5V
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, V
CE
=5V
I
C
=10mA, f=100MHz, V
CE
=5V
SYMBOL
V
CES
I
CBO
I
EBO
TEST CONDITION
I
C
=0.1mA
V
CB
=30V
V
EB
=10V
I
C
=10mA, V
CE
=5V
MIN.
30
-
-
5,000
10,000
10,000
20,000
-
-
125
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-
100
100
-
-
-
-
1.5
2.0
-
V
V
MHz
-
UNIT
V
nA
nA
2000. 2. 26
Revision No : 3
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
