SEMICONDUCTOR
TECHNICAL DATA
DARLINGTON TRANSISTOR
B
MPSA27
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
A
Complementary to MPSA77.
N
K
D
E
G
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
C
T
j
T
stg
RATING
60
60
10
500
625
150
-55
150
UNIT
V
V
M
H
F
F
V
mA
mW
L
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
* Pulse Test : PW 300 S, Duty Cycle 2%.
SYMBOL
I
CBO
I
EBO
V
(BR)CES
V
(BR)CBO
h
FE
(1) *
h
FE
(2) *
V
CE(sat)
*
V
BE
*
TEST CONDITION
V
CE
=50V, I
E
=0
V
EB
=10V, I
B
=0
I
C
=100 A, I
E
=0
I
C
=100 A, I
E
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
MIN.
-
-
60
60
10K
10K
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
100
100
-
-
-
-
1.5
2
V
V
UNIT
nA
nA
V
V
2002. 2. 20
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
