SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
B
MPSA56
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
A
Complementary to MPSA06.
N
K
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
-80
-80
-5
-500
500
625
150
-55
150
UNIT
V
V
V
mA
mA
mW
L
D
H
F
F
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
SYMBOL
I
CBO
I
CEO
V
(BR)CEO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
TEST CONDITION
V
CB
=-80V, I
E
=0
V
CE
=-60V, I
B
=0
I
C
=-1mA, I
B
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-100mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
E
=0, I
C
=-100mA
MIN.
-
-
-80
100
100
-
-
50
TYP.
-
-
-
-
-
-
-
-
MAX.
-100
-100
-
-
-
-0.25
-1.2
-
V
V
MHz
UNIT
nA
nA
V
1998. 1. 9
Revision No : 2
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