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MPSA64 参数 Datasheet PDF下载

MPSA64图片预览
型号: MPSA64
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面PNP晶体管(通用达林顿晶体管) [EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)]
分类和应用: 晶体晶体管达林顿晶体管局域网
文件页数/大小: 2 页 / 69 K
品牌: KEC [ KEC(KOREA ELECTRONICS) ]
 浏览型号MPSA64的Datasheet PDF文件第2页  
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
B
MPSA62/63/64
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
Complementary to MPSA13/14.
A
N
K
E
G
CHARACTERISTIC
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
MPSA62
MPSA63/64
MPSA62
MPSA63/64
SYMBOL
V
CBO
RATING
-20
-30
-20
-30
-10
-500
625
150
-55 150
UNIT
V
F
H
F
L
M
C
V
CES
V
EBO
I
C
P
C
T
j
T
stg
V
V
mA
mW
1
2
3
J
MAXIMUM RATING (Ta=25
)
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter
Breakdown Voltage
Collector Cut-off
Current
Emitter Cut-off Current
MPSA62
MPSA63
DC Current Gain
MPSA64
MPSA63
MPSA64
Collector-Emitter
Saturation Voltage
Base Emitter Voltage
Current Gain
Bandwith Product
MPSA62
MPSA63/64
MPSA62
MPSA63/64
MPSA63/64
V
CE(sat)
h
FE
I
C
=-100mA, V
CE
=-5V
I
C
=-10mA, I
B
=-0.01mA
I
C
=-100mA, I
B
=-0.1mA
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-10mA, f=100MHz, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
MPSA62
MPSA63/64
MPSA62
MPSA63/64
SYMBOL
V
(BR)CES
TEST CONDITION
I
C
=-0.1mA, I
B
=0
V
CB
=-15V, I
E
=0
V
CB
=-30V, I
E
=0
V
EB
=-10V, I
C
=0
MIN.
-20
-30
-
-
20,000
5,000
10,000
10,000
20,000
-
-
-
-
125
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-0.1
-0.1
-
-
-
-
-
-1.0
-1.5
-1.4
-2.0
-
V
UNIT
V
I
CBO
I
EBO
A
A
V
BE
f
T
V
MHz
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
1999. 11. 30
Revision No : 3
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