SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05FSESC
Single Line TVS Diode for ESD
Protection in Portable Electronics
FEATURES
100 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 10A(tp=8/20 s)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD
protection applications.
(* Multi-Layer Varistors [0402 Size])
Protects on I/O or power line.
Low clamping voltage.
Low leakage current.
CATHODE MARK
C
1
E
2
D
F
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_ 0.10
0.80 +
_
0.30 + 0.05
_
+ 0.10
0.60
_
0.13 + 0.05
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
ESC
Marking
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Junction Temperature
Storage Temperature
)
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
100
10
-55 150
-55 150
2
CATHODE MARK
UNIT
W
A
2
1
5S
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=5V
I
PP
=5A, tp=8/20 s
I
PP
=10A, tp=8/20 s
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
6
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
5
-
5
9.8
V
10.0
80
pF
UNIT
V
V
A
2005. 6. 24
Revision No : 1
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