SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : P
C
=2W(T
C
=25 )
E
B
PZTA44
EPITAXIAL PLANAR NPN TRANSISTOR
A
H
L
2
K
J
1
3
G
F
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(T
C
=25
)
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
500
400
6
300
2
150
-55 150
UNIT
V
D
1
C
2
3
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
_
6.5 + 0.2
_
3.5 + 0.2
1.8 MAX
0.7+0.15/-0.1
_
7 + 0.3
2.3 TYP
0.26+0.09/-0.02
3.0+0.15/-0.1
_
1.75 + 0.25
0.1 MAX
10 MAX
V
V
mA
W
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
C
=100 A, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=400V, I
E
=0
V
CB
=320V, I
E
=0
V
CE
=400V, I
B
=0
V
CE
=320V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
DC Current Gain
*
h
FE
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitane
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
*
*
V
CE(sat)
V
BE(sat)
C
ob
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
MIN.
500
400
400
6.0
-
TYP.
-
-
-
-
-
MAX.
-
-
-
-
100
UNIT
V
V
V
V
nA
Collector Cut off Current
Emitter Cutoff Current
I
CES
I
EBO
-
-
40
50
45
40
-
-
-
-
-
-
-
-
-
-
-
-
500
100
-
200
-
-
0.5
0.75
7
nA
nA
V
V
pF
2005. 1. 17
Revision No : 0
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
