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IRF640PBF 参数 Datasheet PDF下载

IRF640PBF图片预览
型号: IRF640PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET动态的dv / dt额定值额定重复性雪崩快速切换 [Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 6752 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRF640, SiHF640  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit layout considerations  
Low stray inductance  
Ground plane  
D.U.T.  
Low leakage inductance  
current transformer  
-
+
-
-
+
RG  
dV/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by duty factor "D"  
D.U.T. - device under test  
VDD  
Driver gate drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
= 10 V*  
GS  
D.U.T. I waveform  
SD  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
D.U.T. V waveform  
DS  
Diode recovery  
dV/dt  
V
DD  
Re-applied  
voltage  
Body diode forward drop  
Ripple 5 %  
Inductor current  
I
SD  
* VGS = 5 V for logic level devices  
Fig. 14 - For N-Channel  
www.kersemi.com  
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