IRFR4105TRL 参数 Datasheet PDF下载

AUTOMOTIVE GRADE

PD - 97597A

AUIRFR4105

HEXFET

®

Power MOSFET

Features

●

●

●

●

●

●

●

●

●

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed

up toTjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

D

V

(BR)DSS

R

DS(on)

max.

I

D (Silicon Limited)

55V

45mΩ

27A

20A

G

S

I

D (Package Limited)

g

D

S

G

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

AUIRFR4105

G

D

S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

A

) is 25°C, unless otherwise specified.

Parameter

I

D

@ T

C

= 25°C

I

D

@ T

C

= 100°C

I

D

@ T

C

= 25°C

I

DM

P

D

@T

C

= 25°C

V

GS

E

AS

I

AR

E

AR

dv/dt

T

J

T

STG

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V (Package Limited)

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Max.

27

19

20

100

68

0.45

± 20

65

16

6.8

5.0

-55 to + 175

300

g

Units

A

™

Ù

d

™

e

W

W/°C

V

mJ

A

mJ

V/ns

°C

Thermal Resistance

R

θJC

R

θJA

R

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

h

Parameter

Typ.

–––

–––

–––

Max.

2.2

50

110

Units

°C/W

www.kersemi.com

1

07/05/11