AUIRFR/U4105Z
120
15V
EAS, Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
100
ID
TOP
2.0A
3.5A
BOTTOM
18A
RG
V
GS
20V
D.U.T
IAS
tp
80
+
V
- DD
A
60
0.01
Ω
40
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
20
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
10 V
Q
GS
V
G
Q
GD
4.5
VGS(th) Gate threshold Voltage (V)
4.0
Charge
3.5
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
ID = 250µA
3.0
50KΩ
12V
.2µF
.3µF
2.5
D.U.T.
V
GS
3mA
+
V
-
DS
2.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
I
G
I
D
Current Sampling Resistors
www.kersemi.com
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature
7
KERSEMI [ Kersemi Electronic Co., Ltd. ]
