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IRFR420ATRLPBF 参数 Datasheet PDF下载

IRFR420ATRLPBF图片预览
型号: IRFR420ATRLPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管开关脉冲
文件页数/大小: 7 页 / 2685 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRFR420A, IRFU420A, SiHFR420A,
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
4.3
8.5
Single
D
FEATURES
500
3.0
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
DPAK
(TO-252)
IPAK
(TO-251)
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR420APbF
SiHFR420A-E3
IRFR420A
SiHFR420A
DPAK (TO-252)
IRFR420ATRPbF
a
SiHFR420AT-E3
a
-
-
DPAK (TO-252)
IRFR420ATRLPbF
SiHFR420ATL-E3
-
-
IPAK (TO-251)
IRFU420APbF
SiHFU420A-E3
IRFU420A
SiHFU420A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
500
± 30
3.3
2.1
10
0.67
140
2.5
5.0
83
3.4
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
Starting T
J
= 25 °C, L = 45 mH, R
G
= 25
Ω,
I
AS
= 2.5 A (see fig. 12).
I
SD
2.5 A, dI/dt
270 A/µs, V
DD
V
DS
, T
J
150 °C.
1.6 mm from case.
www.kersemi.com
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