AUIRFR5410
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-100
–––
–––
-2.0
3.2
–––
–––
–––
–––
–––
–––
-0.12 –––
––– 0.205
–––
-4.0
–––
–––
–––
-25
––– -250
–––
100
––– -100
V
V/°C
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -7.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -7.8A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
58
45
46
4.5
7.5
760
260
170
58
8.3
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= -8.4A
V
DS
= -80V
V
GS
= -10V
V
DD
= =-50V
I
D
= -8.4A
R
G
= 9.1
R
D
= 6.2
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
fh
ns
fh
D
G
S
nH
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
h
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
130
650
-13
A
-52
-1.6
190
970
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -7.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -8.4A
di/dt = 100A/μs
f
S
fh
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 6.4mH, R
G
= 25,
I
AS
= -7.8A. (See Figure 12)
I
SD
-7.8A, di/dt
200A/µs, V
DD
V
(BR)DSS
,
T
J
150°C.
Pulse width
300µs;
duty cycle 2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
R
is measured at Tj approximately 90°C.
2
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