IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 60
V
GS
= - 10 V
19
5.4
11
Single
S
FEATURES
•
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9024/SiHFR9024)
Straight Lead (IRFU9024/SiHFU9024)
Available in Tape and Reel
P-Channel
Fast Switching
Lead (Pb)-free Available
Available
0.28
RoHS*
COMPLIANT
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9024PbF
SiHFR9024-E3
IRFR9024
SiHFR9024
DPAK (TO-252)
IRFR9024TRPbF
a
SiHFR9024T-E3
a
IRFR9024TR
a
SiHFR9024T
a
DPAK (TO-252)
IRFR9024TRLPbF
a
SiHFR9024TL-E3
a
IRFR9024TRL
a
SiHFR9024TL
a
DPAK (TO-252)
IRFR9024TRRPbF
a
SiHFR9024TR-E3
a
-
-
IPAK (TO-251)
IRFU9024PbF
SiHFU9024-E3
IRFU9024
SiHFU9024
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 60
± 20
- 8.8
- 5.6
- 35
0.33
0.020
300
- 8.8
5.0
42
2.5
- 4.5
- 55 to + 150
260
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
E
AS
a
I
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
a
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 4.5 mH, R
G
= 25
Ω,
I
AS
= - 8.8 A (see fig. 12).
c. I
SD
≤
- 11 A, dI/dt
≤
140 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
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