IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
5.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 80 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.9 A
b
V
DS
= - 50 V, I
D
= - 1.9 A
- 100
-
- 2.0
-
-
-
-
0.97
-
- 0.093
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.2
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
200
94
18
-
-
-
10
27
15
17
4.5
7.5
-
-
-
8.7
2.2
4.1
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 4.0 A, V
DS
= - 80 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 50 V, I
D
= - 4.0 A,
R
G
= 24
Ω,
R
D
= 11
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
80
0.17
- 3.1
A
- 12
- 5.5
160
0.30
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 3.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 4.0 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
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