IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
8.9
2.1
3.9
Single
S
FEATURES
• Dynamic dV/dt Rating
3.0
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210/SiHFR9210)
• Straight Lead (IRFU9210/SiHFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
G
D
P-Channel MOSFET
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9210PbF
SiHFR9210-E3
IRFR9210
SiHFR9210
DPAK (TO-252)
IRFR9210TRPbF
a
SiHFR9210T-E3
a
IRFR9210TR
a
SiHFR9210T
a
DPAK (TO-252)
-
-
IRFR9210TRL
a
SiHFR9210TL
a
IPAK (TO-251)
IRFU9210PbF
SiHFU9210-E3
IRFU9210
SiHFU9210
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 200
± 20
- 1.9
- 1.2
- 7.6
0.20
0.020
300
- 1.9
2.5
25
2.5
- 5.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
Repetitive Avalanche Current
I
AR
a
Repetitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 124 mH, R
G
= 25
Ω,
I
AS
= - 1.9 A (see fig. 12).
c. I
SD
≤
- 1.9 A, dI/dt
≤
70 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
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