IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 250
V
GS
= - 10 V
14
3.1
6.8
Single
S
FEATURES
3.0
•
•
•
•
•
•
•
P-Channel
Surface Mount (IRFR9214/SiHFR9214)
Straight Lead (IRFU9214/SiHFU9214)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9214PbF
SiHFR9214-E3
IRFR9214
SiHFR9214
DPAK (TO-252)
IRFR9214TRLPbF
a
SiHFR9214TL-E3
a
IRFR9214TRL
a
SiHFR9214TL
a
DPAK (TO-252)
IRFR9214TRPbF
a
SiHFR9214T-E3
a
IRFR9214TR
a
SiHFR9214T
a
IPAK (TO-251)
IRFU9214PbF
SiHFU9214-E3
IRFU9214
SiHFU9214
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
for 10 s
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 250
± 20
- 2.7
- 1.7
- 11
0.40
100
- 2.7
5.0
50
- 5.0
- 55 to + 150
260
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
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