IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 400
V
GS
= - 10 V
13
3.2
5.0
Single
7.0
FEATURES
•
•
•
•
•
•
•
P-Channel
Surface Mount (IRFR9310/SiHFR9310)
Straight Lead (IRFU9310/SiHFU9310)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
S
D PAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9310PbF
SiHFR9310-E3
IRFR9310
SiHFR9310
DPAK (TO-252)
IRFR9310TRLPbF
a
SiHFR9310TL-E3
a
IRFR9310TRL
a
SiHFR9310TL
a
DPAK (TO-252)
IRFR9310TRPbF
a
SiHFR9310T-E3
a
IRFR9310TR
a
SiHFR9310T
a
DPAK (TO-252)
IRFR9310TRRPbF
a
SiHFR9310TR-E3
a
-
-
IPAK (TO-251)
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 400
± 20
- 1.8
- 1.1
- 7.2
0.40
92
- 1.8
5.0
50
- 24
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
T
C
= 25 °C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 57 mH, R
G
= 25
Ω,
I
AS
= - 1.8 A (see fig. 12).
c. I
SD
≤
- 1.1 A, dI/dt
≤
450 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
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