IRFR9N20D/IRFU9N20D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
200 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.23 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.38
Ω
V
GS
= 10V, I
D
= 5.6A
3.0
––– 5.5
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
V
DS
= 200V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
18
4.7
9.0
7.5
16
13
9.3
560
97
29
670
40
74
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 5.6A
27
I
D
= 5.6A
7.1
nC V
DS
= 160V
14
V
GS
= 10V,
–––
V
DD
= 100V
–––
I
D
= 5.6A
ns
–––
R
G
= 11Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
100
5.6
8.6
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
–––
–––
Min. Typ. Max. Units
Max.
1.75
50
110
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
9.4
––– –––
showing the
A
G
integral reverse
38
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 5.6A, V
GS
= 0V
––– 130 –––
ns
T
J
= 25°C, I
F
= 5.6A
––– 560 –––
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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