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IRFRC20TRLPBFA 参数 Datasheet PDF下载

IRFRC20TRLPBFA图片预览
型号: IRFRC20TRLPBFA
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 4340 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
18
3.0
8.9
Single
600
4.4
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFRC20/SiHFRC20)
Straight Lead (IRFUC20/SiHFUC20)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
D
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFUC/SiHFUC series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFRC20PbF
SiHFRC20-E3
IRFRC20
SiHFRC20
DPAK (TO-252)
IRFRC20TRLPbF
a
SiHFRC20TL-E3
a
IRFRC20TRL
a
SiHFRC20TL
a
DPAK (TO-252)
IRFRC20TRPbF
a
SiHFRC20T-E3
a
IRFRC20TR
a
SiHFRC20T
a
DPAK (TO-252)
IRFRC20TRRPbF
a
SiHFRC20TR-E3
a
IRFRC20TRR
a
SiHFRC20TR
a
IPAK (TO-251)
IRFUC20PbF
SiHFUC20-E3
IRFUC20
SiHFUC20
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
600
± 20
2.0
1.3
8.0
0.33
0.020
450
2.0
4.2
42
2.5
3.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
E
AS
I
AR
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 206 mH, R
G
= 25
Ω,
I
AS
= 2.0 A (see fig. 12).
c. I
SD
2.0 A, dI/dt
40 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
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