IRFR210, IRFU210, SiHFR210, SiHFU210
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.2
1.8
4.5
Single
D
FEATURES
200
1.5
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR210PbF
SiHFR210-E3
IRFR210
SiHFR210
DPAK (TO-252)
IRFR210TRLPbF
a
SiHFR210TL-E3
a
IRFR210TRL
a
SiHFR210TL
a
DPAK (TO-252)
IRFR210TRPbF
a
SiHFR210T-E3
a
IRFR210TR
a
SiHFR210T
a
DPAK (TO-252)
-
-
IRFR210TRR
a
SiHFR210TR
a
IPAK (TO-251)
IRFU210PbF
SiHFU210-E3
IRFU210
SiHFU210
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
200
± 20
2.6
1.7
10
0.20
0.020
130
2.7
2.5
25
2.5
5.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
Avalanche Current
I
AR
a
E
AR
Repetitive Avalanche Energy
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28 mH, R
G
= 25
Ω,
I
AS
= 2.6 A (see fig. 12).
c. I
SD
≤
2.6 A, dI/dt
≤
70 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
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