IRFR214, IRFU214, SiHFR214, SiHFU214
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.2
1.8
4.5
Single
D
FEATURES
250
2.0
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210/SiHFR9210)
• Straight Lead (IRFU9210/SiHFU9210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR214PbF
SiHFR214-E3
IRFR214
SiHFR214
DPAK (TO-252)
IRFR214TRLPbF
a
SiHFR214TL-E3
a
-
-
DPAK (TO-252)
IRFR214TRPbF
a
SiHFR214T-E3
a
IRFR214TR
a
SiHFR214T
a
DPAK (TO-252)
-
-
IRFR214TRR
a
SiHFR214TR
a
IPAK (TO-251)
IRFU214PbF
SiHFU214-E3
IRFU214
SiHFU214
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
250
± 20
2.2
1.4
8.8
0.20
0.020
190
2.2
2.5
25
2.5
4.8
- 55 to + 150
260
d
UNIT
V
A
W/°C
mJ
A
mJ
W
W
V/ns
°C
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
I
AR
E
AR
Repetitive Avalanche Energy
a
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
P
D
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, Starting T
J
= 25 °C, L = 62 mH, R
G
= 25
Ω,
I
AS
= 2.2 A (see fig. 12).
c. I
SD
≤
2.2 A, dI/dt
≤
65 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 Material).
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