IRFR224, IRFU224, SiHFR224, SiHFU224
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
2.7
7.8
Single
D
FEATURES
250
1.1
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224/SiHFR224)
• Straight Lead (IRFU224/SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR224PbF
SiHFR224-E3
IRFR224
SiHFR224
DPAK (TO-252)
IRFR224TRPbF
a
SiHFR224T-E3
a
IRFR224TR
a
SiHFR224T
a
DPAK (TO-252)
IRFR224TRLPbF
a
SiHFR224TL-E3
a
IRFR224TRL
a
SiHFR224TL
a
IPAK (TO-251)
IRFU224PbF
SiHFU224-E3
IRFU224
SiHFU224
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
T
C
= 25 °C
T
A
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
250
± 20
3.8
2.4
15
0.33
0.020
130
3.8
4.2
42
2.5
4.8
W/°C
mJ
A
mJ
W
V/ns
A
UNIT
V
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1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
