IRFR/U24N15DPbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
14A
10
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
C, Capacitance(pF)
1000
Ciss
8
6
Coss
100
4
Crss
2
10
1
10
100
1000
0
0
5
10
15
20
25
30
35
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
T
J
= 25
°
C
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
10msec
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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