PD - 95516A
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
IRFR3418PbF
IRFU3418PbF
14m
:
V
DSS
80V
R
DS(on)
Max
I
D
30A
D-Pak
IRFR3418
I-Pak
IRFU3418
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
80
± 20
70
50
280
140
3.8
0.95
5.2
-55 to + 175
Units
V
h
A
W
c
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
e
W/°C
V/ns
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount) *
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
°C/W
www.kersemi.com
1
12/03/04
KERSEMI [ Kersemi Electronic Co., Ltd. ]
