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IRFU3504ZPBF 参数 Datasheet PDF下载

IRFU3504ZPBF图片预览
型号: IRFU3504ZPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 先进的工艺技术 [Advanced Process Technology]
分类和应用:
文件页数/大小: 11 页 / 4240 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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PD - 95521A
AUTOMOTIVE MOSFET
IRFR3504ZPbF
IRFU3504ZPbF
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 40V
G
S
R
DS(on)
= 9.0mΩ
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR3504Z
I-Pak
IRFU3504Z
Absolute Maximum Ratings
Parameter
I
D
@
I
D
@
I
D
@
I
DM
T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
77
54
42
310
90
Units
A
™
P
D
@T
C
= 25°C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
0.60
± 20
Single Pulse Avalanche Energy Tested Value
Ù
h
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
1.66
40
110
Units
°C/W
i
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www.kersemi.com
1
1/17/05