PD - 94523
IRFR3518
IRFU3518
Applications
l
High frequency DC-DC converters
HEXFET
®
Power MOSFET
V
DSS
80V
R
DS(on)
max
29mW
I
D
30A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3518
I-Pak
IRFU3518
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
80
± 20
38
27
150
110
0.71
5.2
-55 to + 175
300 (1.6mm from case )
Units
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
40
110
Units
°C/W
www.kersemi.com
1
09/23/02
KERSEMI [ Kersemi Electronic Co., Ltd. ]
