PD - 95097A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
l
l
IRFR3706PbF
IRFU3706PbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
9.0mΩ
I
D
75A
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3706
I-Pak
IRFU3706
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 12
75
53
280
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.7
50
110
Units
°C/W
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.kersemi.com
1
12/14/04
KERSEMI [ Kersemi Electronic Co., Ltd. ]
