PD - 95519A
SMPS MOSFET
Applications
l
IRFU3709PbF
HEXFET
®
Power MOSFET
l
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
V
DSS
30V
R
DS(on)
max
9.0mΩ
I
D
90A
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
I-Pak
IRFU3709
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
±20
90
57
360
120
48
0.96
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.04
110
Units
°C/W
www.kersemi.com
1
12/06/04
KERSEMI [ Kersemi Electronic Co., Ltd. ]
