IRFR/U3709ZCPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
10000
VDS= 24V
VDS= 15V
C, Capacitance(pF)
Ciss
1000
4.0
3.0
Coss
Crss
2.0
100
1.0
10
1
10
100
0.0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
1
T J = 25°C
VGS = 0V
0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10msec
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
