Features
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IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
V
DSS
= 100V
R
DS(on)
= 18mΩ
G
S
This HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
Description
I
D
= 42A
D-Pak
I-Pak
IRFR3710ZPbF IRFU3710ZPbF
I-Pak Leadform 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
°C
300 (1.6mm from case )
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
A
d
Ã
h
W
W/°C
V
mJ
A
mJ
g
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
Max.
1.05
50
110
Units
°C/W
i
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1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
