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IRFU9014 参数 Datasheet PDF下载

IRFU9014图片预览
型号: IRFU9014
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 4533 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
12
3.8
5.1
Single
S
FEATURES
- 60
0.50
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9014/SiHFR9014)
• Straight Lead (IRFU9014/SiHFU9014)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9014PbF
SiHFR9014-E3
IRFR9014
SiHFR9014
DPAK (TO-252)
IRFR9014TRLPbF
a
SiHFR9014TL-E3
a
IRFR9014TRL
a
SiHFR9014TL
a
DPAK (TO-252)
IRFR9014TRPbF
a
SiHFR9014T-E3
a
IRFR9014TR
a
SiHFR9014T
a
IPAK (TO-251)
IRFU9014PbF
SiHFU9014-E3
IRFU9014
SiHFU9014
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 60
± 20
- 5.1
- 3.2
- 20
0.20
0.020
140
- 5.1
2.5
25
2.5
- 4.5
- 55 to + 150
260
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 6.3 mH, R
G
= 25
Ω,
I
AS
= - 5.1 A (see fig. 12).
c. I
SD
- 6.7 A, dI/dt
90 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
www.kersemi.com
1