IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
14
6.5
6.5
Single
S
FEATURES
- 50
0.28
•
•
•
•
•
•
•
Surface Mountable (Order As IRFR9020/SiHFR9020)
Straight Lead Option (Order As IRFU9020/SiHFU9020)
Repetitive Avalanche Ratings
Dynamic dV/dt Rating
Simple Drive Requirements
Ease of Paralleling
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020/SiHFR9020 is provided on 16mm tape. The
straight lead option IRFR9020/SiHFR9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9020PbF
SiHFR9020-E3
IRFR9020
SiHFR9020
DPAK (TO-252)
IRFR9020TRPbF
a
SiHFR9020T-E3
a
IRFR9020TR
a
SiHFR9020T
a
DPAK (TO-252)
IRFR9020TRLPbF
a
SiHFR9020TL-E3
a
IRFR9020TRL
a
SiHFR9020TL
a
IPAK (TO-251)
IRFU9020PbF
SiHFU9020-E3
IRFU9020
SiHFU9020
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.kersemi.com
1
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
LIMIT
- 50
± 20
- 9.9
- 6.3
- 40
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
KERSEMI [ Kersemi Electronic Co., Ltd. ]
