欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRFU9120PBF 参数 Datasheet PDF下载

IRFU9120PBF图片预览
型号: IRFU9120PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 4046 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
 浏览型号IRFU9120PBF的Datasheet PDF文件第2页浏览型号IRFU9120PBF的Datasheet PDF文件第3页浏览型号IRFU9120PBF的Datasheet PDF文件第4页浏览型号IRFU9120PBF的Datasheet PDF文件第5页浏览型号IRFU9120PBF的Datasheet PDF文件第6页浏览型号IRFU9120PBF的Datasheet PDF文件第7页  
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
18
3.0
9.0
Single
S
FEATURES
• Dynamic dV/dt Rating
0.60
• Repetitive Avalanche Rated
• Surface Mount (IRFR9120/SiHFR9120)
• Straight Lead (IRFU9120/SiHFU9120)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9120PbF
SiHFR9120-E3
IRFR9120
SiHFR9120
DPAK (TO-252)
IRFR9120TRPbF
a
SiHFR9120T-E3
a
IRFR9120TR
a
SiHFR9120T
a
DPAK (TO-252)
IRFR9120TRLPbF
a
SiHFR9120TL-E3
a
IRFR9120TRL
a
SiHFR9120TL
a
IPAK (TO-251)
IRFU9120PbF
SiHFU9120-E3
IRFU9120PbF
SiHFU9120
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
T
C
= 25 °C
T
A
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 100
± 20
- 5.6
- 3.6
- 22
0.33
0.020
210
- 5.6
4.2
42
2.5
- 5.5
W/°C
mJ
A
mJ
W
V/ns
A
UNIT
V
www.kersemi.com
1