IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
2.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
- 250
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
- 0.25
-
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.0
-
-
-
-
-
-
- 4.0
100
- 100
- 500
3.0
-
VGS
=
20 V
-
nA
VDS = - 250 V, VGS = 0 V
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
DS = - 200 V, VGS = 0 V, TJ = 125 °C
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
ID = - 1.7 Ab
-
Ω
VDS = - 50 V, ID = - 1.7 A
0.9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
220
75
11
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz, see fig. 5
V
-
-
pF
nC
14
3.1
6.8
-
ID = - 1.7 A, VDS = - 200 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = - 10 V
-
-
11
14
20
17
-
VDD = - 125 V, ID = - 1.7 A,
ns
RG = 21 Ω, RD = 70 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
- 2.7
- 11
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 2.7 A, VGS = 0 Vb
-
-
-
-
- 5.8
220
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
150
870
ns
nC
TJ = 25 °C, IF = - 1.7 A, dI/dt = 100 A/µsb
Qrr
ton
1300
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
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