omponents
21201 Itasca Street Chatsworth
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Features
•
•
•
•
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
MBR1030CT
THRU
MBR1060CT
10 Amp
Schottky Barrier
Rectifier
30-60 Volts
TO-220AB
•
•
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
30V
35V
40V
45V
50V
60V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
30V
35V
40V
45V
50V
60V
B
C
K
PIN
1
2
3
L
M
D
A
E
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
21V
24.5V
28V
31.5V
35V
42V
F
G
I
J
N
H H
PIN 1
PIN 2
CASE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR1030CT-45CT
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT
I
F(AV)
I
FSM
10A
125A
T
C
= 105°C
8.3ms, half sine
PIN 3
MM
14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
V
F
.70V
.80V
.57V
.65V
0.1mA
15mA
I
FM
= 5A
T
J
= 25°C
I
FM
= 5A
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
IR
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
C
J
170pF
220pF
Measured at
1.0MHz, V
R
=4.0V
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
