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MBR2045CTHE45 参数 Datasheet PDF下载

MBR2045CTHE45图片预览
型号: MBR2045CTHE45
PDF下载: 下载PDF文件 查看货源
内容描述: Guardring过电压保护 [Guardring for overvoltage protection]
分类和应用:
文件页数/大小: 4 页 / 1957 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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MBR(F,B)2035CT thru MBR(F,B)2060CT
TO-220AB
ITO-220AB
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
MBR20xxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF20xxCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
2
1
MBRB20xxCT
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
10 A x 2
35 V to 60 V
150 A
0.57 V, 0.70 V
150 °C
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified
current at T
C
= 135 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
T
STG
V
AC
1.0
10 000
- 65 to + 150
- 65 to + 175
1500
MBR2035CT
35
35
35
MBR2045CT
45
45
45
20
10
150
0.5
MBR2050CT
50
50
50
MBR2060CT
60
60
60
UNIT
V
V
V
A
A
A
V/µs
°C
°C
V
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode at
t
p
= 2 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
www.kersemi.com
1